Hybrid bonding using dummy bonding contacts

US11049834B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Tao Wang · Beijing, CN
• Si Ping Hu · Hubei, CN
• Jia Wen Wang · 红钢城街道, CN
• Shi Qi Huang · Hubei, CN
• Jifeng Zhu · Hubei, CN
• Jun Chen · Hubei, CN
• Zi Qun Hua · 红钢城街道, CN

Key dates

• Filing date: Mar 4, 2019
• Grant date: Jun 29, 2021
• Expiry date: Jun 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.