Patent · US Active

Optimization of integrated circuit reliability

US11054459B2 · kind B2 · utility

0Cited by
7References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2019
Grant dateJul 6, 2021
Priority date
Expiry dateNov 7, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/50
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.