Patent · US Active

Semiconductor devices with through silicon vias and package-level configurability

US11056467B2 · kind B2 · utility

0Cited by
12References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 2, 2019
Grant dateJul 6, 2021
Priority date
Expiry dateOct 2, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/921
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.