Trench-gate insulated-gate bipolar transistors

US11056581B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Mingjiao Liu · Gilbert, US
• Shamsul Arefin Khan · Chandler, US
• Gordon M. Grivna · Mesa, US
• Meng-Chia Lee · Tyhee, US
• Ralph N. Wall · Pocatello, US

Key dates

• Filing date: Jan 31, 2018
• Grant date: Jul 6, 2021
• Expiry date: May 21, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.