Method for determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth
US11061331B2 · kind B2 · utility
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Key dates
| Filing date | Feb 20, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Oct 10, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For determining a structure-independent contribution of a lithography mask to a fluctuation of the linewidth, recorded 2D intensity distributions (15zi) of an unstructured measurement region of a lithography mask are evaluated in a spatially resolved manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.