Systems and methods for aluminum-containing film removal
US11062921B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Sep 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of an aluminum-containing material. The contacting may produce an aluminum halide material. The methods may include flowing an etchant precursor into the substrate processing region. The methods may include contacting the aluminum halide material with the etchant precursor. The methods may include removing the aluminum halide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.