III-N to rare earth transition in a semiconductor structure
US11063114B2 · kind B2 · utility
1Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Nov 19, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Nov 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.