Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds
US11066601B2 · kind B2 · utility
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Key dates
| Filing date | May 29, 2020 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | May 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.