Computational metrology
US11067902B2 · kind B2 · utility
4Cited by
16References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.