Patent · US Active

Sub pixel light emitting diodes for direct view display and methods of making the same

US11069837B2 · kind B2 · utility

1Cited by

10References

7Claims

0Family size

Assignee

GLO AB · SE

Inventors

Fariba Danesh · Los Altos Hills, US
Max Batres · Lompoc, US
Michael J. Cich · Fremont, US
Zhen Chen · Stanford, US

Key dates

Filing date	Apr 19, 2019
Grant date	Jul 20, 2021
Priority date	—
Expiry date	Apr 19, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0364
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.