Patent · US Active

Semiconductor device with a portion including silicon and nitrogen and method of manufacturing

US11075134B2 · kind B2 · utility

0Cited by

0References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Kahn · Rangersdorf, AT
Oliver Humbel · Maria Elend, AT
Philipp Koch · Villach, AT
Angelika Koprowski · Klagenfurt, AT
Christian Maier · Kettenham, DE
Gerhard Schmidt · Graz, AT
Juergen Steinbrenner · Zistersdorf, AT

Key dates

Filing date	Aug 30, 2019
Grant date	Jul 27, 2021
Priority date	—
Expiry date	Oct 10, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.