Geometrically selective deposition of dielectric films utilizing low frequency bias
US11081318B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 14, 2018 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Feb 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.