Semiconductor device with bond pad extensions formed on molded appendage

US11081455B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Chan Lam Cha · Melaka City, MY
• Wei Han Koo · Melaka City, MY
• Thorsten Meyer · Regensburg, DE
• Klaus Schiess · Allensbach, DE
• Guan Choon Matthew Nelson Tee · Melaka City, MY

Key dates

• Filing date: Apr 29, 2019
• Grant date: Aug 3, 2021
• Expiry date: Apr 29, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/00014
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor die having a main surface, a rear surface, outer edge sides extending between the main and rear surfaces, and a first conductive bond pad disposed on the main surface, an electrically insulating mold compound body formed around the outer edge sides of the semiconductor die with the main surface of the semiconductor die exposed from an upper surface of the mold compound body, a first metallization layer formed on the upper surface of the mold compound body and on the main surface of the semiconductor die, and a first bond pad extension formed in the first metallization layer. The first bond pad extension overlaps with the upper surface of the mold compound body. The first bond pad extension is conductively connected with the first conductive bond pad. The first bond pad extension is an externally accessible point of electrical contact of the device.