Patent · US Active

Bonding method with electron-stimulated desorption

US11081463B2 · kind B2 · utility

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10Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Frank Fournel · Meylan, FR
Vincent Larrey · La Murette, FR
Sylvain Maitrejean · Paris, FR
Christophe Morales · Le Pont-de-Claix, FR

Key dates

Filing date	Nov 1, 2019
Grant date	Aug 3, 2021
Priority date	—
Expiry date	Nov 25, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/80894
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.