Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same
US11088116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Nov 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first semiconductor die includes first bonding pads. The first bonding pads include proximal bonding pads embedded within a first bonding dielectric layer and distal bonding pads having at least part of the sidewall that overlies the first bonding dielectric layer. A second semiconductor die includes second bonding pads. The second bonding pads are bonded to the proximal bonding pads and the distal bonding pads. The proximal bonding pads are bonded to a respective one of a first subset of the second bonding pads at a respective horizontal bonding interface and the distal bonding pads are bonded to a respective one of a second subset of the second bonding pads at a respective vertical bonding interface at the same time. Dielectric isolation structures may vertically extend through the second bonding dielectric layer of the second semiconductor die and contact the first bonding dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.