Methods of forming self-aligned vias

US11094544B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Benjamin Schmiege · Santa Clara, US
• Jeffrey W. Anthis · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Susmit Singha Roy · Mountain View, US
• Ziqing Duan · Sunnyvale, US
• Yihong Chen · San Jose, US
• Kelvin Chan · San Ramon, US
• Srinivas Gandikota · Santa Clara, US

Key dates

• Filing date: Jul 25, 2019
• Grant date: Aug 17, 2021
• Expiry date: Dec 5, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.