Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type

US11094779B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Philip Christoph Brandt · Oberhaching, DE
• Andre Rainer Stegner · Unterhaching, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Frank Pfirsch · Birkenfeld, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Manfred Pfaffenlehner · Birkenfeld, DE
• Thomas Auer · Metnitz, AT

Key dates

• Filing date: Apr 25, 2017
• Grant date: Aug 17, 2021
• Expiry date: Apr 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.