Contact-first field-effect transistors
US11101367B2 · kind B2 · utility
0Cited by
41References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a device structure provides for forming a fin of a semiconductor material. A first contact is formed on the fin. A second contact is formed on the fin and spaced along a length of the fin from the first contact. A self-aligned gate electrode is formed on the fin that is positioned along the length of the fin between the first contact and the second contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.