Compositions comprising base-reactive component and processes for photolithography
US11106137B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 15, 2011 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.