Adjustment of read and write voltages using a space between threshold voltage distributions
US11107543B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A current demarcation voltage is determined, where the current demarcation voltage is to be applied to a memory cell for reading a state of the memory cell. Based on the current demarcation voltage and a space between a first threshold voltage distribution corresponding to a first state of the memory cell and a second threshold voltage distribution corresponding to a second state of the memory cell, a test demarcation voltage having a low error rate of reading the state of the memory cell is selected. The current demarcation voltage is set to correspond to the selected test demarcation voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.