CVD Mo deposition by using MoOCl4
US11107675B2 · kind B2 · utility
0Cited by
6References
17Claims
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Key dates
| Filing date | Apr 26, 2018 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Dec 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.