MRAM devices containing a harden gap fill dielectric material
US11114606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Oct 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A harden gap fill dielectric material that has improved chemical and physical properties is formed laterally adjacent to a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode structure of a memory structure. The harden gap fill dielectric material can be formed by introducing, via ion implantation, a bond breaking additive into an as deposited gap fill dielectric material layer and thereafter curing the gap fill dielectric material layer containing the bond breaking additive. The curing includes UV curing alone, or UV curing in combination with laser annealing. The curing employed in the present application does not negatively impact the MTJ pillar or top electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.