Magnetoresistive random access memory and method for fabricating the same
US11114612B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Feb 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, part of the MTJ stack is removed, a first cap layer is formed on a sidewall of the MTJ stack, and the first cap layer and the MTJ stack are removed to form a first MTJ and a second MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.