Techniques for forming angled structures
US11119405B2 · kind B2 · utility
3Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.