Image sensor device
US11121166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Apr 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.