Patent · US Active

Back gates and related apparatuses, systems, and methods

US11127751B2 · kind B2 · utility

1Cited by

0References

25Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Andrew Bicksler · Nampa, US
Marc Aoulaiche · Boise, US
Albert Fayrushin · Seojong-myeon, KR

Key dates

Filing date	Jan 6, 2020
Grant date	Sep 21, 2021
Priority date	—
Expiry date	Jan 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/27
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Back gates and related apparatuses, systems, and methods are disclosed. An apparatus includes a channel material including a first side and a second side opposite the first side. The apparatus also includes word lines comprising electrically conductive material spaced along the first side of the channel material. The apparatus further includes a back gate comprising electrically conductive material proximate to the second side of the channel material. A method includes biasing a bit line and a word line associated with a memory cell according to a memory operation, and biasing the back gate while biasing the bit line and the word line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.