Pnictide nanocomposite structure for lattice stabilization
US11133389B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Feb 5, 2020 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.