Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method
US11137677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | May 7, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle (100) includes a pellicle film (101); a support frame (103); and a first adhesive layer (109) provided at an end of the support frame, the end being opposite to an end on which the pellicle film is extended. The pellicle further includes an inorganic layer (111) on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient (μm) in the range of 5×103 cm2/g to 2×105 cm2/g.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.