High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
US11139142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Jun 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2815
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plurality of energy filter values are obtained using a model that simulates potential distribution within a 3D feature when an electron beam of an SEM impinges on a selected area that includes the 3D feature. A correspondence is extracted between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution. A plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values are obtained. The plurality of SEM images are associated with their respective depths based on the extracted correspondence between the plurality of energy filter values and the respective depths. A composite 3D profile of the 3D feature is generated from the plurality of SEM images obtained from various depths of the 3D feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.