Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device

US11139375B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Carsten Schaeffer · Annenheim, AT
Alexander Breymesser · Villach, AT
Bernhard Goller · Villach, AT
Ronny Kern · Finkenstein, AT
Matteo Piccin · Villach, AT
Roland Rupp · Achern, DE
Francisco Javier Santos Rodriguez · Villach, AT

Key dates

Filing date	Jul 3, 2019
Grant date	Oct 5, 2021
Priority date	—
Expiry date	Jul 24, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.