Method of forming film stacks with reduced defects
US11145504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Jan 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.