Electrode/dielectric barrier material formation and structures
US11145710B1 · kind B1 · utility
1Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Jun 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.