Christopher W. Petz
35Patents
4h-index
50Co-inventors
58Inventor score
Filing activity: Nov 1, 2013 → Jun 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9553263B1 | Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems | Electricity | 22 | Active |
| US9419212B2 | Barrier film techniques and configurations for phase-change memory elements | Electricity | 10 | Active |
| US10381072B2 | Phase change memory stack with treated sidewalls | Electricity | 6 | Active |
| US9209388B2 | Memory cells and methods of forming memory cells | Electricity | 4 | Active |
| US11393756B2 | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems | Electricity | 3 | Active |
| US10325653B2 | Variable resistance memory stack with treated sidewalls | Electricity | 3 | Active |
| US10354989B1 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 3 | Active |
| US10304749B2 | Method and apparatus for improved etch stop layer or hard mask layer of a memory device | Electricity | 1 | Active |
| US10811419B1 | Storage node shaping | Electricity | 1 | Active |
| US11289487B2 | Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods | Electricity | 1 | Active |
| US11145710B1 | Electrode/dielectric barrier material formation and structures | Electricity | 1 | Active |
| US10692572B2 | Variable resistance memory stack with treated sidewalls | Electricity | 0 | Active |
| US10700091B2 | Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars | Electricity | 0 | Active |
| US10916564B2 | Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars | Electricity | 0 | Active |
| US11322502B2 | Apparatus including barrier materials within access line structures, and related methods and electronic systems | Electricity | 0 | Active |
| US10355014B1 | Assemblies having vertically-extending structures | Electricity | 0 | Active |
| US11133461B2 | Laminate diffusion barriers and related devices and methods | Electricity | 0 | Active |
| US12324143B2 | Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors | Electricity | 0 | Active |
| US9893282B2 | Methods of forming resistive memory elements | Electricity | 0 | Active |
| US10446751B2 | Methods of forming resistive memory elements | Electricity | 0 | Active |
| US10957644B2 | Integrated structures with conductive regions having at least one element from group 2 of the periodic table | Electricity | 0 | Active |
| US12046658B2 | Electrode formation | Electricity | 0 | Active |
| US11127745B2 | Devices, methods of forming a device, and memory devices | Electricity | 0 | Active |
| US12381153B2 | Microelectronic devices, memory devices, and electronic systems | Electricity | 0 | Active |
| US9431606B1 | Memory cells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.