Patent · US Active

Resistive random access memory device

US11145812B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gabriel Molas · Grenoble, FR
Philippe Blaise · Audincourt, FR
Faiz Dahmani · Alfortville, FR
Elisa VIANELLO · Grenoble, FR

Key dates

Filing date	Oct 16, 2017
Grant date	Oct 12, 2021
Priority date	—
Expiry date	Mar 7, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/56
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.