Method of measuring a parameter of a patterning process, metrology apparatus, target
US11150563B2 · kind B2 · utility
1Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Dec 10, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Dec 25, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7092
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A technique of measuring a parameter of a patterning process is disclosed. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.