Methods and apparatus for metal silicide deposition
US11152221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2020 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Mar 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.