Selection device and storage apparatus
US11152428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2018 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Apr 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.