Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process

US11158540B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wenguang Li · Los Gatos, US
• James S. Papanu · San Rafael, US
• Wei-Sheng Lei · San Jose, US
• Prabhat Kumar · Framingham, US
• Brad Eaton · Menlo Park, US
• Ajay Kumar · Fairport, US
• Alexander Lerner · Carmiel, IL

Key dates

• Filing date: May 26, 2017
• Grant date: Oct 26, 2021
• Expiry date: Feb 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31127
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Light-absorbing masks and methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a water-soluble matrix based on a solid component and water, and a light-absorber species throughout the water-soluble matrix. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.