Wrap around contact formation for VTFET
US11164947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Feb 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0184
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved top source and drain contact designs for VTFET devices are provided. In one aspect, a method of forming a VTFET device includes: depositing a first ILD over a VTFET structure having fins patterned in a substrate, bottom source and drains at a base of the fins, bottom spacers on the bottom source and drains and gates alongside the fins; patterning trenches in the first ILD; forming top spacers lining the trenches; forming top source and drains in the trenches at the tops of the fins; forming sacrificial caps covering the top source and drains; depositing a second ILD onto the first ILD; patterning contact trenches in the second ILD, exposing the sacrificial caps; removing the sacrificial caps through the contact trenches; and forming top source and drain contacts in the contact trenches that wrap around the top source and drains. A VTFET device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.