Fluorine-doped nitride films for improved high-k reliability

US11171047B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yixiong Yang · San Jose, US
• Srinivas Gandikota · Santa Clara, US
• Steven C. H. Hung · Sunnyvale, US
• Jacqueline S. Wrench · San Jose, US
• Yongjing Lin · San Jose, US
• Susmit Singha Roy · Mountain View, US
• Wei V. Tang · Santa Clara, US
• Shih Chung Chen · Hsinchu, TW

Key dates

• Filing date: Jun 28, 2020
• Grant date: Nov 9, 2021
• Expiry date: Jun 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.