Patent · US Active

Semiconductor device and a method of forming the semiconductor device

US11171049B2 · kind B2 · utility

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0References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Werner Robl · Regensburg, DE
Michael Fugger · Wien, AT
Carsten Schaeffer · Annenheim, AT
Michael Nelhiebel · Villach, AT
Klemens Pruegl · Regensburg, DE

Key dates

Filing date	May 7, 2019
Grant date	Nov 9, 2021
Priority date	—
Expiry date	Jun 20, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53266
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.