Contacts and liners having multi-segmented protective caps
US11171051B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | May 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a method of forming a multi-layer integrated circuit (IC) structure that includes forming a first layer of the multi-layered IC structure, wherein the first layer includes a trench having a liner and a conductive interconnect formed in the trench. The liner is formed such that it is not on a portion of a sidewall of the conductive interconnect. A multi-segmented cap is formed having a first cap segment and a second cap segment. The first cap segment is on a top surface of the conductive interconnect, and a first portion of the second cap segment is on the portion of the sidewall of the conductive interconnect. The second cap segment is on a top surface of the first cap segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.