Support structure for integrated circuitry
US11177306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jan 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.