Switch device, storage apparatus, and memory system
US11183633B2 · kind B2 · utility
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Key dates
| Filing date | Sep 12, 2017 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switch device includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.