Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices
US11186772B2 · kind B2 · utility
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Key dates
| Filing date | Sep 2, 2020 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Sep 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.