Substrate drying method, photoresist developing method, photolithography method including the same, and substrate drying system
US11189503B2 · kind B2 · utility
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3References
17Claims
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Key dates
| Filing date | May 23, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Oct 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.