Tight pitch via structures enabled by orthogonal and non-orthogonal merged vias
US11189566B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Apr 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment of the present invention, a photolithographic mask is provided. The photolithographic mask includes at least one merged via pattern in the photolithographic mask for printing a merged via opening in a resist layer, wherein the at least one merged via pattern includes a compound shape having a first rectangular opening portion and a second rectangular opening portion that intersect at an angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.