Oxide-based resistive non-volatile memory cell and method for manufacturing same

US11189792B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Grenouillet · Voiron, FR
• Marios Barlas · St-Estève, FR
• Philippe Blaise · Audincourt, FR
• Benoit Sklenard · Grenoble, FR
• Elisa VIANELLO · Grenoble, FR

Key dates

• Filing date: Sep 8, 2017
• Grant date: Nov 30, 2021
• Expiry date: Oct 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive non-volatile memory cell includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, the memory cell being capable of reversibly switching between: —a high resistance state obtained by applying a first bias voltage between the first electrode and the second electrode; and—a low resistance state obtained by applying a second bias voltage between the first electrode and the second electrode; the oxide layer including a switching zone forming a conduction path prioritised for the current passing through the memory cell when the memory cell is in the low resistance state. The oxide layer includes a first zone doped with aluminium or silicon, the aluminium or silicon being present in the first zone with an atomic concentration that is selected so as to locate the switching zone outside the first zone.