Benoit Sklenard
7Patents
2h-index
9Co-inventors
36Inventor score
Filing activity: Jan 28, 2013 → Sep 8, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9246006B2 | Recrystallization of source and drain blocks from above | Electricity | 4 | Active |
| US9018078B2 | Method of making a 3D integrated circuit | Electricity | 3 | Active |
| US9343375B2 | Method for manufacturing a transistor in which the strain applied to the channel is increased | Electricity | 2 | Active |
| US9966453B2 | Method for doping source and drain regions of a transistor by means of selective amorphisation | Electricity | 2 | Active |
| US9379213B2 | Method for forming doped areas under transistor spacers | Electricity | 2 | Active |
| US11189792B2 | Oxide-based resistive non-volatile memory cell and method for manufacturing same | Electricity | 1 | Active |
| US10985317B2 | Device for selecting a memory cell | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.