Method of forming resistive random access memory cell

US11189793B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Shih-Wei Su · Tainan, TW
• Da-Jun Lin
• Bin-Siang Tsai · Shiliujia, TW
• Ya-Jyuan Hung · Kaohsiung, TW
• Ting-An Chien · Tainan, TW

Key dates

• Filing date: Oct 1, 2019
• Grant date: Nov 30, 2021
• Expiry date: Mar 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

A method of forming a resistive random access memory cell includes the following steps. A first electrode layer, a blanket resistive switching material layer and a second electrode layer are formed on a layer sequentially. The second electrode layer is patterned to form a second electrode. The blanket resistive switching material layer is patterned to form a resistive switching material layer. An oxygen implanting process is performed to implant oxygen in two sidewall parts of the resistive switching material layer.